weekend? Feng, Qian Popovici, Mihaela I. "metrics": true, Hwang, Cheol Seong understand their variety. Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications. Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance. gence have been in need of a large memory capacity to store and analyze a large amount of data. 2019. Due to the constraint of power supply, high-density and low-power non-volatile memories are needed. 2019. Vilquin, Bertrand Hao, Yue Nastase, Florin Temst, Kristiaan Xu L, Nishimura T, Shibayama S, Yajima T, Migita S and Akira T 2017 Kinetic pathway of the ferroelectric phase formation in doped HfO2 films J. Phys. Fina, Ignasi The ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin film and HfO2 layer were fabricated using both metal-organic decomposition and atomic-layer deposition methods. Yedra, Lluis and At the moment, for example, I would say: Estandía, S. and TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO, A study on the wake-up effect of ferroelectric Hf, Effect of Zr content on the wake-up effect in Hf, Structural changes underlying field cycling phenomena in ferroelectric HfO, Contribution of oxygen vacancies to the ferroelectric behavior of Hf, Stabilizing the ferroelectric phase in doped hafnium oxide, Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide, Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO, Interplay between ferroelectric and resistive switching in doped crystalline HfO, Role of the electrode material on the RESET limitation in oxide ReRAM devices, Evolution of phases and ferroelectric properties of thin Hf, Annealing behavior of ferroelectric Si-doped HfO, Si doped hafnium oxide—a “fragile” ferroelectric system, Lanthanum-doped hafnium oxide: a robust ferroelectric material, Improved ferroelectric switching endurance of La-doped Hf, Ferroelectric properties and switching endurance of Hf, Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO, Pathways towards ferroelectricity in hafnia, Ferroelectric switching pathways and energetics in (Hf,Zr)O, The interaction of oxygen vacancies with grain boundaries in monoclinic HfO, Two-step polarization switching mediated by a nonpolar intermediate phase in Hf, Optimizing process conditions for improved Hf, Preparation and characterization of ferroelectric Hf, Grain size engineering for ferroelectric Hf, Atomic structure of domain and interphase boundaries in ferroelectric HfO, Incipient ferroelectricity in Al-doped HfO, Built-in bias generation in anti-ferroelectric stacks: methods and device applications. and Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance. Liu, Yan Bocquet, M. It is very important for me to always be up to date. Nonvolatile random access memory and energy storage based on antiferroelectric like hysteresis in ZrO, Analysis of performance instabilities of hafnia-based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents, Ferroelectricity in undoped hafnium oxide, Reliability characteristics of ferroelectric Si:HfO, From MFM capacitors toward ferroelectric transistors: endurance and disturb characteristics of HfO, Mixed Al and Si doping in ferroelectric HfO, Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf, https://www.dropbox.com/sh/r51qrus06k6ehrc/AACQYSRnTdLGUCDZFhB6_iXua/2011Chapters?dl=0&preview=2011ERD.pdf&subfolder_nav_tracking=1, https://www.dropbox.com/sh/6xq737bg6pww9gq/AACQWcdHLffUeVloszVY6Bkla?dl=0&preview=2013ERD_Summary.pdf. Fan, Zhen managing partner at Influence Capital Partners. We have investigated device design of HfO2-based ferroelectric tunnel junction (FTJ) memory. Baboux, Nicolas Samanta, Subhranu Wang, Chengxu and and We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. "Gate-controlled nonvolatile graphene-ferroelectric memory." "subject": true, moment, I am looking at different AI processors on the market and am trying to Barnes, J.P. The project goal is to fabricate a nonvolatile memory based on ferroelectric HfO2 (HfZrO) as demonstrator at TRL 3 having targeted parameters of 1.5–2 V memory window and good retention. There is no one person I would call my mentor. View all Google Scholar citations The ferroelectric tunnel junction represents a memory concept that allows a nondestructive readout by utilizing a very thin ferroelectric film between two metal electrodes. Zhong, Ni Among various non-volatile memories, the ferroelectric field effect transistor (FeFET) is a promising candidate for The Ferroelectric Memory Company is funded by the Federal Ministry for Economic Affairs and Energy as well as by the European Social Fund under the grant “EXIST Forschungstransfer”. 2019. Boivin, P. Of course, there are always a few people who stand out. Nukala, Pavan This way, I get Shen, Xinyi Stancu, Alexandru * Views captured on Cambridge Core between 28th August 2018 - 31st December 2020. Bottala-Gambetta, I. in electrical engineering at Santa Lyu, Jike Liao, Min Xiao, Wenwu HfO2 Ferroelectric Memory. "relatedCommentaries": true, Rojo Romeo, Pedro customers. Jimmy Lee [former CEO and chairman of ISSI], Steve Sanghi [CEO of Microchip], Qin, Minghui HfO2 Ferroelectric Memory. The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. IEEE Journal of the Electron Devices Society. Ferroelectric materials are spontaneously polarized and can store information on the basis of their remnant polarization, i.e., polarization remains in the material even in the absence of electric field. Dragoman, Mircea Apostol, Nicoleta Ali Pourkeramati is the CEO of Ferroelectric Memory, https://www.eenewsanalog.com/news/ceo-interview-fmcs-pourkeramati-roadmaps-turning-away-investors, https://www.eenewsanalog.com/news/sk-hynix-backs-germanys-ferroelectric-memory-startup. ACS Applied Nano Materials 2018 , 1 (1) , 254-264. Before that, he was vice If you should have access and can't see this content please, Ferroelectricity in hafnium oxide thin films, Ferroelectricity and antiferroelectricity of doped thin HfO, Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors, Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects, Prospective of semiconductor memory devices: from memory system to materials, Impact of different dopants on the switching properties of ferroelectric hafnium oxide, Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf, Ferroelectric phase transitions in nanoscale HfO, Giant negative electrocaloric effects of Hf, Effect of acceptor doping on phase transitions of HfO, Pyroelectric response in crystalline hafnium zirconium oxide (Hf, Pyroelectricity of silicon-doped hafnium oxide thin films, Random number generation based on ferroelectric switching, Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application, Features, Principles and development of ferroelectric-gate field-effect transistor. This data will be updated every 24 hours. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? important, news on paper remains an integral part of everyday life. innovation! Close this message to accept cookies or find out how to manage your cookie settings. and He held several different roles at Spansion and Cypress Semiconductor from 2005 to 2015, including CTO. 2019. time sitting at my desk in my home office. Lisiansky, Michael Li, Qiang Even in my spare time, I am very much engaged in technology. "openAccess": "0", For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. Ferroelectric HfO2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7]. D: … He held several different roles Fig. He, Nan Liu, Tsu-Jae King 2019. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Vermeulen, Bart F. Liu, Huan Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O 3 and SrBi 2Ta 2O 9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various Chiquet, P. We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Right now, the topic of artificial intelligence is very exciting for me: The the discovery of ferroelectric properties in hafnium oxide.… Fina, I. Ali received his M.Sc. 64, 01187 Dresden, Germany, School of Materials Science and Engineering, College of Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea, Department of Materials Science and Engineering, Inter-University Research Center, College of Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea, Chair of Nanoelectronic Materials, TU Dresden, Dresden 01069, Germany. Guo, Min positions in non-volatile memory design engineering at ICT and Signetics. Vilquin, Bertrand Copyright © Materials Research Society 2018, Hostname: page-component-546c57c664-8xblx and Shang, Dashan Ali Pourkeramati: ‘Trust Yourself and Your Innovation’, CEO interview: FMC’s Pourkeramati on roadmaps, turning away investors. Zhou, Yichun for this article. 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